WFF9N50 mosfet equivalent, silicon n-channel mosfet.
� � � � � 9A,500V, RDS(on)(Max0.85Ω)@VGS=10V Ultra-low Gate charge(Typical 30nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150℃)
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This Power MOSFET is produced using Winsemi's advanced planar stripe,DMOS technology.This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics .This devices is specially well sui.
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